Transmittance and chromaticity are essential requirements for optical performance of thin-film transistor (TFT) arrays. However, it is still a challenge to get high transmittance and excellent chromaticity at the same time. In this paper, optimized optical design by using antireflection film theory and optical phase modulation is demonstrated in low temperature poly-silicon (LTPS) TFT arrays. To realize high transmittance, the refractive index difference of adjacent films is modified by using silicon oxynitride (SiO_xN_y) with adjustable refractive index. To realize excellent chromaticity, the thicknesses of multilayer films are precisely regulated for antireflection of certain wavelength light. The results show that the transmittance and chromaticity have been improved by about 6% and 18‰, respectively, at the same time, which is a big step forward for high optical performance of TFT arrays. The device characteristics of the TFT arrays with the optimal design, such as threshold voltage and electron mobility, are comparable to those of conventional TFT arrays. The optimized optical design results in enhanced power-conversion efficiencies and perfects the multilayer film design on the basic theory, which has great practicability to be applied in TFT arrays.

透射率和色度是薄膜晶体管（TFT）阵列光学性能的基本要求。然而，同时获得高透射率和优异的色度仍然是一个挑战。本文介绍了在低温多晶硅（LTPS）TFT阵列中使用减反射膜理论和光学相位调制进行的优化光学设计。为了实现高透射率，通过使用氮氧化硅（SiO _x N _y），折射率可调。为了实现出色的色度，可以精确调节多层膜的厚度以防某些波长光的反射。结果表明，透射率和色度分别提高了约6％和18‰，这对于TFT阵列的高光学性能是一大进步。具有最佳设计的TFT阵列的器件特性，例如阈值电压和电子迁移率，可与常规TFT阵列相媲美。优化的光学设计提高了功率转换效率，并在基础理论上完善了多层膜设计，在TFT阵列中具有很大的实用性。