Full three-dimensional numerical analysis based on continuum elasticity and model solid theory has been carried out to evaluate some possible means of tailoring the optoelectronic properties of InAs/GaAs quantum dot (QD) nanosystems. Numerical results predicted that while the stacking period control leads to the shifts in valence band edges, incorporation of In _x Ga_1−x As ternary strain relief layer (SRL) causes composition-dependent shifts in conduction band edges. On the other hand, modification of the SRL shape itself did not yield significant changes in the confinement potentials. It is therefore suggested that strain control by incorporation of ternary intermediate layers combined with geometry controls, would allow greater flexibility in the tailoring of the opto-electronic characteristics of QD-based systems.

已经进行了基于连续弹性和模型固体理论的完整三维数值分析，以评估调整InAs / GaAs量子点（QD）纳米系统的光电性能的一些可能方法。数值结果预测，尽管堆积周期控制导致价带边缘发生偏移，但In _x Ga _{1- x的}引入 由于三元应力消除层（SRL）导致导带边缘的成分依赖性移动。另一方面，对SRL形状的修改本身并未在限制潜力方面产生重大变化。因此，建议通过结合三元中间层和几何控制来控制应变，将在基于QD的系统的光电特性定制中提供更大的灵活性。