Multiferroic materials exhibit tremendous potentials in novel magnetoelectric devices such as high-density non-volatile storage. Herein, we report the coexistence of ferroelectricity and ferromagnetism in two-dimensional Fe-doped In₂Se₃ (Fe_0.16In_1.84Se₃, FIS). The Fe atoms were doped at the In atom sites and the Fe content is ~3.22% according to the experiments. Our first-principles calculation based on the density-functional theory predicts a magnetic moment of 5 µ_B per Fe atom when Fe substitutes In sites in In₂Se₃. The theoretical prediction was further confirmed experimentally by magnetic measurement. The results indicate that pure In₂Se₃ is diamagnetic, whereas FIS exhibits ferromagnetic behavior with a parallel anisotropy at 2 K and a Curie temperature of ∼8 K. Furthermore, the sample maintains stable room-temperature ferroelectricity in piezoresponse force microscopy (PFM) measurement after the introduction of Fe atom into the ferroelectric In₂Se₃ nanoflakes. The findings indicate that the layered Fe_0.16In_1.84Se₃ materials have potential in future nanoelectronic, magnetic, and optoelectronic applications.

多铁材料在新型磁电器件（例如高密度非易失性存储）中显示出巨大的潜力。在此，我们报道了二维Fe掺杂的In ₂ Se ₃（Fe _0.16 In _1.84 Se ₃，FIS）中铁电和铁磁的共存。根据实验，Fe原子掺杂在In原子处，Fe含量约为〜3.22％。我们的第一原理基于密度函数理论计算预计5μ的磁矩_乙每铁原子时的Fe替代在在站点₂硒₃。通过磁测量实验进一步证实了理论预测。结果表明，纯In ₂ Se ₃具有抗磁性，而FIS在2 K和居里温度约8 K时具有平行各向异性的铁磁行为。此外，样品在压电响应力显微镜（PFM）中保持稳定的室温铁电性。将Fe原子引入铁电In ₂ Se ₃纳米薄片中后进行测量。研究结果表明，层状Fe _0.16 In _1.84 Se ₃材料在未来的纳米电子，磁性和光电应用中具有潜力。