Amorphous semiconductors are an important class of semiconductors due to their low temperature deposition and high areal homogeneity over large areas which have been used mainly for display back panel driving circuits. Recent improvements in carrier mobilities in multi-component amorphous semiconductors have opened new area of applications for these amorphous semiconductors. To develop new multi component amorphous structures with optimized electronic properties, it is essential to understand the electron transport behavior in these materials. We have compared electronic structure of amorphous oxide and amorphous oxy-nitride semiconductors to understand the electronic transport in these semiconductors. We also propose certain methods to significantly reduce the computational time required to generate new multi-component amorphous structures and to study their electronic properties such that the development of new amorphous semiconductors with optimized electronic properties can be accelerated.

中文翻译：

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了解多组分非晶半导体中的电子传输

非晶半导体由于其低温沉积和大面积上高的面积均匀性而成为一类重要的半导体，主要用于显示背板驱动电路。多组分非晶半导体中载流子迁移率的最新改进为这些非晶半导体开辟了新的应用领域。为了开发具有优化电子性能的新型多组分非晶结构，必须了解这些材料中的电子传输行为。我们已经比较了非晶氧化物和非晶氮氧化物半导体的电子结构，以了解这些半导体中的电子传输。