Scanning Electron Microscopy (SEM) combined with selective electrochemical etching was used to assess two-dimensional (2-D) dopant profiles in p+/n junctions that formed by using BF₂ implantation followed by annealing. It was discovered that the electrochemically delineated junction depth (d_j) increased with an increase in the BF₂ implantation energy. It was also found that, considering the mechanism of selective electrochemical etching, d_j represents the junction edge that corresponded to the electrically-activated B atoms. The simulated 2-D dopant profiles of the experimental conditions were directly compared with the SEM results, and the implications of the discrepancies are discussed in this paper.

扫描电子显微镜（SEM）与选择性电化学蚀刻相结合，用于评估p + / n结中的二维（2-D）掺杂物分布，该结是通过使用BF ₂注入然后退火而形成的。已经发现，电化学描绘的结深度（d _j）随着BF ₂注入能量的增加而增加。还发现，考虑到选择性电化学蚀刻的机理，d _j代表与电活化的B原子相对应的结边缘。将模拟的实验条件下的二维掺杂物分布图与SEM结果直接进行比较，并讨论了差异的含义。