The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design. For top-contact OTFTs, the dominant leakage conduction mechanism is via Schottky emission and the density of the leakage current increases significantly as the bias voltage increases. For bottom-contact OTFTs, the dominant leakage conduction mechanism is via displacement current. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design.

中文翻译：

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上下接触并五苯薄膜晶体管的漏电传导行为

研究了顶部接触和底部接触并五苯有机薄膜晶体管（OTFT）的泄漏传导机理。与使用顶部接触设计的OTFT相比，使用底部接触设计的OTFT的泄漏传导更低。对于顶部接触式OTFT，主要的泄漏传导机制是通过肖特基发射，并且随着偏置电压的增加，泄漏电流的密度显着增加。对于底部接触式OTFT，主要的泄漏传导机制是通过位移电流。与使用顶部接触设计的OTFT相比，使用底部接触设计的OTFT的泄漏传导更低。