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Experimental verification of memristor-based material implication NAND operation
IEEE Transactions on Emerging Topics in Computing ( IF 5.9 ) Pub Date : 2019-10-01 , DOI: 10.1109/tetc.2017.2760929
Marcos Maestro-Izquierdo , Javier Martin-Martinez , Albert Crespo Yepes , Manel Escudero , Rosana Rodriguez , Montserrat Nafria , Xavier Aymerich , Antonio Rubio

Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more specific and differential logic functions is the material implication logic also named as IMPLY logic. Many papers have been published in this framework but few of them are related with experimental works using real memristor devices. In the paper authors show the verification of the IMPLY function by using Ni/HfO2/Si manufactured devices and laboratory measurements. The proper behavior of the IMPLY structure (2 memristors) has been shown. The paper also verifies the proper operation of a two-step IMPLY-based NAND gate implementation, showing the electrical behavior of the circuit in a cycling operation. A new procedure to implement a NAND gate that requires only one step is experimentally shown as well.

中文翻译:

基于忆阻器材料蕴涵NAND操作的实验验证

忆阻器被认为是用于高密度存储系统的有前途的器件以及新计算范式的潜在基础。在这种情况下,与数据处理相关的更具体和不同的逻辑功能之一是物质蕴涵逻辑,也称为 IMPLY 逻辑。在这个框架中已经发表了许多论文,但很少有与使用真实忆阻器设备的实验工作相关的。在论文中,作者展示了使用 Ni/HfO2/Si 制造的设备和实验室测量对 IMPLY 函数的验证。已显示 IMPLY 结构(2 个忆阻器)的正确行为。该论文还验证了基于 IMPLY 的两步与非门实现的正确操作,显示了循环操作中电路的电气行为。
更新日期:2019-10-01
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