Selenium (Se), a member of the sulfur family, is considered as a potential alternative cathode material due to its high electronic conductivity and comparable volumetric capacity density to sulfur. Herein, we report on a simple one-step procedure to prepare trigonal selenium nanorods (t-Se) on graphene oxide (GO) without using any surfactant. The developed method does not utilize any harmful chemicals or harsh experimental conditions, and is, therefore, friendly from the environmental and economic point of views. We discovered that well-dispersed Se nanorods can be prepared at 20 mM Se under heating at 85 °C for 3 h. The successful growth of t-Se rods on GO sheets was confirmed by X-ray diffraction (crystalline structure), transmission electron microscopy (morphology), Raman spectroscopy (crystalline form and defects), and XPS technique (elemental composition). The Se nanorod-loaded GO composite (GO–Se) displayed a promising specific capacity of 405.5 mAh g⁻¹ at a high current density (10 A g⁻¹) and high cycling stability with a negligible capacity decay over 1000 cycles. Importantly, the GO–Se electrode delivered a high reversible capacity of 471.5 mAh g⁻¹ at 0.5 A g⁻¹. The improved electrical performance of the GO–Se composite could be attributed to the electrical conductivity and unique architecture of reduced graphene, which effectively enhances the utilization of active Se rods and significantly augment the electronic conductivity of the GO–Se electrode. The present study demonstrates that a hybrid system of 1D t-Se impregnated GO composite could be a promising cathode material for long-life batteries and other storage devices.

中文翻译：

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氧化石墨烯硒纳米棒复合材料作为储能器件的稳定电极材料

硒（Se）是硫族的一员，由于其高电导率和与硫相当的体积容量密度，被认为是潜在的替代阴极材料。在这里，我们报告了一种简单的一步步骤，无需使用任何表面活性剂即可在氧化石墨烯（GO）上制备三角硒纳米棒（t-Se）。所开发的方法不使用任何有害化学物质或苛刻的实验条件，因此从环境和经济角度来看是友好的。我们发现可以在85 mC加热3 h下以20 mM Se制备分散良好的Se纳米棒。X射线衍射（晶体结构），透射电子显微镜（形态），拉曼光谱（晶体形式和缺陷），和XPS技术（元素组成）。负载硒纳米棒的GO复合材料（GO–Se）表现出令人鼓舞的405.5 mAh g比容量^-1在高电流密度（10 A g ^-1）和高循环稳定性下，可忽略不计的1000次循环容量衰减。重要的是，GO-Se电极在0.5 A g ^-1下具有471.5 mAh g ^-1的高可逆容量。GO-Se复合材料改善的电性能可以归因于电导率和还原石墨烯的独特结构，从而有效地提高了活性Se棒的利用率，并显着提高了GO-Se电极的电导率。本研究表明，一维t-Se浸渍GO复合材料的混合系统可能是长寿命电池和其他存储设备的有希望的阴极材料。