The effects of the initial growth mode on the electrical properties of atomic layer deposition-grown HfO₂/ SiO₂/Si metal-oxide-semiconductor devices were investigated using in-situ medium energy ion scattering (MEIS). MEIS results clearly showed that wet chemical oxide has a more layer-like growth at an initial growth stage than a thermal oxide starting surface. On the high OH group surface, less shifting of the flat band voltage and mininal hysteresis in the C-V curve was observed primarily due to structural uniformity in the HfO₂ dielectric. The method of surface preparation directly influenced the growth morphologies. These morphologies at the initial growth stage strongly affected C-V quality and charge trapping.

利用原位介质能离子散射（MEIS）研究了初始生长方式对原子层沉积生长的HfO ₂ / SiO ₂ / Si金属氧化物半导体器件电学性能的影响。MEIS结果清楚地表明，湿化学氧化物在初始生长阶段比热氧化物起始表面具有更多的层状生长。在高OH基团表面上，主要由于HfO ₂电介质的结构均匀性，在CV曲线中观察到的平带电压和最小磁滞现象的变化较小。表面制备方法直接影响生长形态。在初始生长阶段，这些形态极大地影响了简历质量和电荷陷阱。