In this paper, CuIn_0.7Ga_0.3Se₂ (CIGS) thin films are deposited on both glass (SLG) and glass/SnO₂:F (SLG/FTO) substrates, by close-spaced vapor transport technique. The Hall effect measurements are performed in the temperature range (300–438 K) for the two SLG/CIGS samples namely CIGS1 and CIGS2, grown at substrate temperature (T_s) of 470 °C and 510 °C, respectively, to investigate the temperature effect on the electrical parameters such as hole concentration (p), conductivity (σ) and mobility (µ). As results, from Arrhenius diagram of (p) and (σ), bandgap energy (E_g) of about 1.38 eV and 1.24 eV are extracted for CIGS1 and CIGS2, respectively. Besides, activation energies (E_a) at 563.9 meV and 239.4 meV are determined for CIGS1 whereas values at 584.2 meV and 72.7 meV are obtained for CIGS2. Furthermore, average mobilities of 1.83 cm²/V s and 1.77 cm²/V s are achieved for CIGS1 and CIGS2 thin films, respectively. Pure aluminum (Al) Schottky contacts are deposited on the front side of FTO/CIGS thin film-devices by physical vapor deposition. Current–voltage (I–V) characteristics are measured and used to extract the electrical parameters of FTO/CIGS/Al Schottky diode using the one diode model. The electrical parameters including series resistance (R_s) of about 93.7 Ω and an ideality factor (n) around 3.47 indicate that the generation–recombination mechanism is predominant.

中文翻译：

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近距离气相传输技术在第二代太阳能电池中生长的CuIn 0.7 Ga 0.3 Se 2薄膜的性能

在本文中，CuIn _0.7 Ga _0.3 Se ₂（CIGS）薄膜通过近距离气相传输技术沉积在玻璃（SLG）和玻璃/ SnO ₂：F（SLG / FTO）衬底上。在两个SLG / CIGS样品CIGS1和CIGS2的温度范围（300–438 K）中进行霍尔效应测量，分别在470°C和510°C的底物温度（T _s）下生长，以研究温度对电参数的影响，例如空穴浓度（p），电导率（σ）和迁移率（µ）。结果，根据（p）和（σ）的Arrhenius图，带隙能量（分别为CIGS1和CIGS2提取了约1.38 eV和1.24 eV的E _g）。此外，对于CIGS1，确定了563.9meV和239.4meV的活化能（E _a），而对于CIGS2，得到了584.2meV和72.7meV的值。此外，CIGS1和CIGS2薄膜的平均迁移率分别为1.83 cm ² / V s和1.77 cm ² / V s。通过物理气相沉积将纯铝（Al）肖特基触点沉积在FTO / CIGS薄膜器件的正面。电流电压（I – V测量特性并使用一个二极管模型提取FTO / CIGS / Al肖特基二极管的电参数。包括约93.7Ω的串联电阻（R _s）和约3.47的理想因子（n）在内的电参数表明，世代复合机制是主要的。