Focused ion beam method, which has excellent capabilities such as local deposition and selective etching, is widely used for micro-electromechanical system (MEMS)-based in situ transmission electron microscopy (TEM) sample fabrication. Among the MEMS chips in which one can apply various external stimuli, the electrical MEMS chips require connection between the TEM sample and the electrodes in MEMS chip, and a connected deposition material with low electrical resistance is required to apply the electrical signal. Therefore, in this study, we introduce an optimized condition by comparing the electrical resistance for C-, Pt-, and W- ion beam induced deposition (IBID) at 30 kV and electron beam induced deposition (EBID) at 1 and 5 kV. The W-IBID at 30 kV with the lowest electrical resistance of about 30 Ω shows better electrical properties than C- and Pt-IBID electrodes. The W-EBID at 1 kV has lower electrical resistance than that at 5 kV; thus, confirming its potential as an electrode. Therefore, for the materials that are susceptible to ion beam damage, it is recommended to fabricate electrical connections using W-EBID at 1 kV.

中文翻译：

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使用现代聚焦离子束系统评估用于电连接的离子/电子束诱导沉积

聚焦离子束法具有局部沉积和选择性刻蚀等优异性能，被广泛用于基于微机电系统（MEMS）的原位透射电子显微镜（TEM）样品制备。在可以施加各种外部刺激的MEMS芯片中，电MEMS芯片需要将TEM样品与MEMS芯片中的电极连接起来，并且需要连接低电阻的沉积材料来施加电信号。因此，在本研究中，我们通过比较 30 kV C-、Pt- 和 W- 离子束诱导沉积 (IBID) 和 1 kV 和 5 kV 电子束诱导沉积 (EBID) 的电阻来引入优化条件。30 kV 下的 W-IBID 具有约 30 Ω 的最低电阻，显示出比 C-和 Pt-IBID 电极更好的电性能。1 kV 时的 W-EBID 电阻比 5 kV 时低；因此，确认其作为电极的潜力。因此，对于容易受到离子束损伤的材料，建议在 1 kV 下使用 W-EBID 制造电气连接。