We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H₃PO₄ solution and Al₂O₃ sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 10¹⁹ cm⁻³ in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.

中文翻译：

---

使用化学溶液涂层通过激光掺杂在硅薄膜晶体管中制造 CMOS 反相器

我们证明了通过激光掺杂 H ₃ PO ₄溶液和 Al ₂ O ₃溶胶涂层可以在 Si 膜中形成 p 型和 n 型激活层。发现在Si膜中激光掺杂区的磷和铝浓度超过10 ¹⁹ cm ^-3。此外，通过霍尔效应测量证实了 n 型和 p 型层的激活载流子的产生。在这项研究中，介绍了激光掺杂制造的 CMOS 反相器的特性。