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A Study of High Temperature Effects on an Asymmetrically Doped Vertical Pillar-Type Field-Effect Transistor
IEEE Transactions on Nanotechnology ( IF 2.4 ) Pub Date : 2020-01-01 , DOI: 10.1109/tnano.2019.2958099
Joon-Kyu Han , Jae Hur , Wu-Kang Kim , Jun-Young Park , Seung-Wook Lee , Seong-Yeon Kim , Ji-Man Yu , Yang-Kyu Choi

The effects of high temperature on an asymmetrically doped vertical pillar-type metal-oxide-semiconductor field-effect transistor (MOSFET) were investigated. An asymmetrically doped source and drain (S/D) can be easily formed in a vertical pillar-type FET due to the unique pillar structure. When high temperature is applied to the asymmetric S/D of a vertical pillar-typed silicon nanowire, it affects mobility and carrier injection differently. It decreases mobility by phonon scattering for heavily doped S and intermediately doped D. In contrast, it enhances carrier injection for intermediately doped S and heavily doped D. Thus the ON-state current (ION) shows opposite dependencies at high temperature. This tendency was verified by electrical measurements and supporting simulations.

中文翻译:

非对称掺杂垂直柱型场效应晶体管的高温效应研究

研究了高温对非对称掺杂垂直柱型金属氧化物半导体场效应晶体管 (MOSFET) 的影响。由于独特的柱结构,可以在垂直柱型 FET 中轻松形成非对称掺杂的源极和漏极 (S/D)。当高温应用于垂直柱型硅纳米线的不对称 S/D 时,它会不同地影响迁移率和载流子注入。它通过重掺杂 S 和中度掺杂 D 的声子散射降低迁移率。相反,它增强了中度掺杂 S 和重度掺杂 D 的载流子注入。因此,导通状态电流 (ION) 在高温下显示出相反的依赖性。这种趋势已通过电气测量和支持模拟得到证实。
更新日期:2020-01-01
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