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Strain effect on the third-harmonic generation of a two-dimensional GaAs quantum dot in the presence of magnetic field and spin–orbit interaction
Indian Journal of Physics ( IF 2 ) Pub Date : 2019-06-24 , DOI: 10.1007/s12648-019-01525-4
Hossein Bahramiyan

The strain effect on the third-harmonic generation (THG) of a two-dimensional GaAs quantum dot has been investigated within the effective mass approximation. For this purpose, first, we have calculated the energy levels and wave function of the system in the presence of Bychkov–Rashba and Dresselhaus terms and strain-dependent term by accomplish the diagonalization method. Then we have computed the THG by an analytical expression. The results illustrate that: (1) there is a maximum in TGH for a special magnetic field corresponding to the anti-crossing magnetic field (Bac). (2) The Bac is not depended on the strain. (3) There is a minimum in TGH at special strain, and we can control the THG by strain and magnetic field.

中文翻译:

磁场和自旋轨道相互作用下应变对二维GaAs量子点三次谐波产生的影响

在有效质量近似范围内,研究了应变对二维GaAs量子点的三次谐波产生(THG)的影响。为此,首先,通过完成对角化方法,计算了在存在Bychkov–Rashba和Dresselhaus项以及应变相关项的情况下系统的能级和波动函数。然后,我们通过解析表达式计算了THG。结果表明:(1)对应于反交叉磁场(B ac)的特殊磁场的TGH最大值。(2)B ac不依赖于应变。(3)特殊应变下的TGH最小,我们可以通过应变和磁场来控制THG。
更新日期:2019-06-24
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