Temperature and injection-current dependencies of radiant flux from blue and ultraviolet GaInN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) were investigated. Experimental results indicate that, compared to blue LEDs, the radiative efficiency of ultraviolet LEDs is relatively insensitive to injection current. It is expected that shallow potential minima caused by indium fluctuation in high-indium-containing GaInN quantum wells for blue LEDs result in a high radiative efficiency at low injection currents due to the localization of carriers; however, the radiative efficiency decreases rapidly with increasing injection current due to the delocalization of carriers.

研究了来自蓝色和紫外GaInN / GaN多量子阱（MQW）发光二极管（LED）的辐射通量的温度和注入电流依赖性。实验结果表明，与蓝色LED相比，紫外线LED的辐射效率对注入电流相对不敏感。可以预期，由于载流子的局部化，用于蓝色LED的高含铟GaInN量子阱中的铟波动引起的浅电位最小值将在低注入电流下产生高辐射效率。然而，由于载流子的离域，辐射效率随着注入电流的增加而迅速降低。