As narrow as 50 nm metal nanowire array patterns were successfully fabricated by nanoimprint lithography (NIL) using thermally curable monomer based resin. Compared to conventional hot embossing lithography, which has used thermoplastic polymers such as PMMA as an imprint resin and thus process temperature and pressure are over 180°C and 50 bar, respectively, thermally curable monomer based resin enabled imprint process at relatively lower temperature (120°C) and pressure (20 bar). Due to the highly fluidic nature of monomer based liquid phase resin, residual layer was not observed after imprinting. Imprinted resist pattern was then treated with oxygen plasma for 5 seconds and 5 nm of Ti layer and 15 nm of Au layer was deposited by e-beam evaporation. The imprinted resist pattern was lifted-off by dipping into an organic solvent, such as acetone. As the result, as narrow as 50 nm Au nanowire array pattern with area of 30 mm × 40 mm was fabricated on a Si substrate. 30 mm × 40 mm of nanowire pattern area was not limited by nanoimprint process, but the laser interference lithography process, which was used to fabricated the master template for imprinting.

使用可热固化的单体基树脂，通过纳米压印光刻（NIL）成功制造了窄至50 nm的金属纳米线阵列图案。与传统的热压印光刻技术相比，传统热压印光刻技术使用了PMMA等热塑性聚合物作为压印树脂，因此工艺温度和压力分别超过180°C和50 bar，可热固化的基于单体的树脂可以在相对较低的温度下进行压印工艺（120 °C）和压力（20 bar）。由于单体基液相树脂的高流动性，在压印后未观察到残留层。然后用氧等离子体处理压印的抗蚀剂图案5秒钟，并通过电子束蒸发沉积5nm的Ti层和15nm的Au层。通过浸入有机溶剂（如丙酮）中剥离掉已刻蚀的抗蚀剂图案。结果，在Si基板上制造了面积为30mm×40mm的窄至50nm的Au纳米线阵列图案。30mm×40mm的纳米线图案面积不受纳米压印工艺的限制，而是通过激光干涉光刻工艺来制造的，用于压印的主模板。