The electrons scattered by the defects in the channel can be described by the time-dependent Schrödinger equation. An analytical and physical model of the time evolution of the source–drain current in a transistor at a given defect density has been proposed. It clearly shows that the source–drain current is composed of direct-current and a lot of alternating-current components. And thus the source–drain current will be sensitive to the defect density in the channel. Further, an analytical and physical relation between the phase shift of alternating-current components and the defect density in the channel is derived. Phase shift obtained from time-evolution experimental data of the source–drain current in aging process of nanoscale memory devices agrees well with the theoretical prediction.

中文翻译：

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量子散射及其对纳米晶体管通道中缺陷产生的源漏电流的影响

由沟道中的缺陷散射的电子可以通过与时间有关的薛定er方程来描述。已经提出了在给定缺陷密度下晶体管的源极-漏极电流随时间变化的分析和物理模型。它清楚地表明，源漏电流由直流电和许多交流电组成。因此，源漏电流将对沟道中的缺陷密度敏感。此外，推导了交流分量的相移与沟道中的缺陷密度之间的解析和物理关系。从纳米级存储器件老化过程中源-漏电流的时间演化实验数据获得的相移与理论预测非常吻合。