As an uncooled infrared (IR) detector, a vanadium-oxide(VO_x)-based microbolometer plays a very important role in the emerging IR imaging technology due to its low cost, small size, simple system-architecture, and etc. As the thermal conductance comes into conflict with the fill factor in the conventional two-level microbolometer structure, a three-level microbolometer structure is proposed using the same active material of VO_x. Coupled physics analyses of the proposed three-level device structure were carried out thermo-mechanically and electrostatically. The results of steady-state analyses show that the temperature increase and the resistance change amount to 29.3 mK/nW and 0.079 %/nW respectively, when the microbolometer is exposed to IR incidence. From the transient coupled physics analyses, the thermal conductance and time constant of the device were obtained as 3.4 × 10⁻⁸ W/K and 4.53 ms respectively. The obtained parameters are comparable to those of a two-level structure having 4 times larger area.

作为一种非冷却式红外（IR）检测器，基于钒氧化物（VO _x）的微辐射热计由于其低成本，小尺寸，简单的系统架构等在新兴的红外成像技术中起着非常重要的作用。在传统的两级微辐射热计结构中，热导率与填充因子冲突，使用相同的VO _x活性材料提出了一种三级微辐射热计结构。对所提出的三级器件结构进行了耦合物理分析，包括热机械和静电分析。稳态分析结果表明，当微辐射热计暴露在红外辐射下时，温度升高和电阻变化分别达到29.3 mK / nW和0.079％/ nW。通过瞬态耦合物理分析，器件的热导率和时间常数分别为3.4×10 ^-8 W / K和4.53 ms。所获得的参数与具有4倍大面积的二级结构的参数相当。