This paper mainly discusses the fabrication and characterization of proximity-coupled Al/Au bilayer kinetic inductance detectors (KIDs). The proximity effect is used to optimize the critical temperature of the superconducting film and to increase the kinetic inductance fraction of the film. An Al/Au bilayer with thickness equal to 30 nm and 10 nm, respectively, is evaporated on a silicon substrate. The KIDs are cooled down to about 90 mK in an adiabatic demagnetization refrigerator. The measured average internal quality factor of the resonances is around 27,000. The critical temperature is 0.8 K, and the kinetic inductance is estimated to be about 2 $${\text{pH}}/\square$$ pH / □ . The minimum detectable frequency of the chip is estimated to be about 60 GHz. The critical temperature can be further tuned by optimizing the thickness of the aluminum and gold films. The proximity-coupled Al/Au KIDs represent an appealing detector technology for photon detection at frequencies below 90 GHz.

中文翻译：

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接近耦合的 Al/Au 双层动力学电感探测器

本文主要讨论接近耦合的 Al/Au 双层动力学电感探测器 (KID) 的制作和表征。邻近效应用于优化超导薄膜的临界温度并增加薄膜的动力学电感分数。厚度分别等于 30 nm 和 10 nm 的 Al/Au 双层蒸镀在硅衬底上。KID 在绝热退磁冰箱中冷却至约 90 mK。测得的共振平均内部品质因数约为 27,000。临界温度为 0.8 K，动感电感估计约为 2 $${\text{pH}}/\square$$ pH / □ 。该芯片的最小可检测频率估计约为 60 GHz。通过优化铝膜和金膜的厚度，可以进一步调整临界温度。接近耦合的 Al/Au KID 代表了一种有吸引力的检测器技术，用于在 90 GHz 以下的频率进行光子检测。