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Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device.
Nanoscale Research Letters ( IF 5.418 ) Pub Date : 2020-01-31 , DOI: 10.1186/s11671-020-3249-7
Nasir Ilyas 1 , Dongyang Li 1 , Chunmei Li 1 , Xiangdong Jiang 1 , Yadong Jiang 1, 2 , Wei Li 1, 2
Affiliation  

In this study, by inserting a buffer layer of TiOx between the SiOx:Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiOx:Ag/TiOx/p++-Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently controlled during analog switching. The synaptic characteristics of the memristor device with a wide range of resistance change for weight modulation by implementing positive or negative pulse trains have been investigated extensively. Several learning and memory functions have been achieved simultaneously, including potentiation/depression, paired-pulse-facilitation (PPF), short-term plasticity (STP), and STP-to-LTP (long-term plasticity) transition controlled by repeating pulses more than a rehearsal operation, and spike-time-dependent-plasticity (STDP) as well. Based on the analysis of logarithmic I-V characteristics, it has been found that the controlled evolution/dissolution of conductive Ag-filaments across the dielectric layers can improve the performance of the testing memristor device.

中文翻译:

Ag / SiOx:Ag / TiOx / p ++-Si忆阻器器件的模拟转换和人工突触行为

在这项研究中,通过在SiOx:Ag层和底部电极之间插入TiOx缓冲层,我们通过物理气相沉积工艺开发了一种结构简单的Ag / SiOx:Ag / TiOx / p ++-Si的忆阻器器件,其中在模拟切换过程中可以有效地控制灯丝的生长和破裂。已经广泛研究了通过实现正或负脉冲序列​​而具有大范围电阻变化以用于重量调制的忆阻器装置的突触特性。同时实现了几种学习和记忆功能,包括增强/抑制,配对脉冲促进(PPF),短期可塑性(STP)和通过重复脉冲控制的STP到LTP(长期可塑性)的转变。而不是排练操作,以及与时间相关的可塑性(STDP)。
更新日期:2020-01-31
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