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Below 200 °C Fabrication Strategy of Black‐Phase CsPbI3 Film for Ambient‐Air‐Stable Solar Cells
Solar RRL ( IF 7.9 ) Pub Date : 2020-01-30 , DOI: 10.1002/solr.202000014
Tao Ye 1 , Bo Zhou 2 , Fei Zhan 2 , Fangli Yuan 3 , Seeram Ramakrishna 4 , Dmitri Golberg 5 , Xi Wang 1
Affiliation  

Cesium‐based fully inorganic black‐phase (BP) lead halide perovskites (such as α‐, β‐, and γ‐CsPbI3) with excellent thermal stability and a decently high photovoltaic performance have attracted increasing attention. However, a below 200 °C fabrication process of the desirable BP CsPbI3 has rarely been reported. Herein, the detailed crystal structure evolution of ambient‐air‐stable BP CsPbI3 prepared under low temperature conditions is investigated by exploiting the strong coordination bonding between CO in polyvinylpyrrolidone (PVP) and Pb in CsPbI3 and inflection effect of PVP under annealing. It is found that ambient‐air‐stable BP CsPbI3 films are formed and the energy barrier for the long‐term stable BP CsPbI3 formation is significantly reduced (the required annealing temperature is only 80 °C). After optimization, the highest power conversion efficiencies (PCEs) of ≈4.0% and 10.0% are recorded for the 3% PVP‐added devices with light absorbers annealed at 80 and 160 °C, respectively. More importantly, the 3% PVP device annealed at 160 °C maintains ≈80% of its original PCE after 5 months storage under ambient‐air conditions.

中文翻译:

低于200°C的环境稳定空气太阳能电池用黑色CsPbI3薄膜制造策略

基于铯完全无机黑色相(BP)卤化铅钙钛矿(如α-,β-和γ-CsPbI 3)具有优异的热稳定性和高体面光伏性能已经吸引了越来越多的关注。然而,很少有报道希望的BP CsPbI 3在低于200℃的制造工艺。本文通过利用聚乙烯吡咯烷酮(PVP)中的CO与CsPbI 3中的Pb之间的强配位键合以及退火过程中PVP的拐点效应,研究了低温条件下制备的环境稳定的BP CsPbI 3的详细晶体结构演变。。发现周围空气稳定的BP CsPbI 3形成了薄膜,并大大降低了长期稳定BP CsPbI 3形成的能垒(所需的退火温度仅为80°C)。经过优化后,添加了3%PVP且光吸收剂分别在80°C和160°C退火的器件的最高功率转换效率(PCE)约为4.0%和10.0%。更重要的是,在环境空气条件下存放5个月后,在160°C退火的3%PVP设备保持其原始PCE的约80%。
更新日期:2020-01-30
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