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Bufferless 1.5 µm III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms
Optica ( IF 10.4 ) Pub Date : 2020-02-03 , DOI: 10.1364/optica.381745
Yu Han , Zhao Yan , Wai Kit Ng , Ying Xue , Kam Sing Wong , Kei May Lau

Efficient III-V lasers directly grown on Si remain the “holy grail” for present Si-photonics research. In particular, a bufferless III-V laser grown on the Si-photonics 220 nm silicon-on-insulator (SOI) platform could seamlessly bridge the active III-V light sources with the passive Si-based photonic devices. Here we report on the direct growth of bufferless 1.5 µm III-V lasers on industry-standard 220 nm SOI platforms using metal organic chemical vapor deposition (MOCVD). Taking advantage of the constituent diffusivity at elevated growth temperatures, we first devised a MOCVD growth scheme for the direct hetero-epitaxy of high-quality III-V alloys on the 220 nm SOI wafers through synergizing the conventional aspect ratio trapping (ART) and the lateral ART methods. In contrast to prevalent epitaxy inside V-grooved pockets, our method features epitaxy inside trapezoidal troughs and thus enables the flexible integration of different III-V compounds on SOIs with different Si device layer thicknesses. Then, using InP as an example, we detailed the growth process and performed extensive study of the crystalline quality of the epitaxial III-V. Finally, we designed and fabricated both pure InP and InP/InGaAs lasers, and we achieved room-temperature lasing in both the 900 nm band and the 1500 nm band under pulsed optical excitation. Direct epitaxy of these in-plane and bufferless 1.5 µm III-V lasers on the 220 nm SOI platform suggests the imminent interfacing with Si-based photonic devices and the subsequent realization of fully integrated Si-based photonic circuits.

中文翻译:

在Si光子220 nm绝缘体上硅平台上生长的1.5 µm无缓冲III-V激光器

直接在硅上生长的高效III-V激光器仍然是当前Si光子学研究的“圣杯”。特别是,在Si光子220 nm绝缘体上硅(SOI)平台上生长的无缓冲III-V激光器可以将有源III-V光源与无源Si基光子器件无缝桥接。在这里,我们报告使用金属有机化学气相沉积(MOCVD)在行业标准的220 nm SOI平台上无缓冲1.5 µm III-V激光器的直接生长。利用提高的生长温度下的成分扩散率,我们首先设计了一种MOCVD生长方案,通过与传统的长宽比捕集(ART)以及传统的宽高比捕获(ART)协同作用,在220 nm SOI晶片上直接对高质量III-V合金进行异质外延。横向ART方法。与V型槽内的普遍外延不同,我们的方法具有梯形槽内部的外延特性,因此可以在具有不同Si器件层厚度的SOI上灵活集成不同的III-V化合物。然后,以InP为例,详细描述了生长过程,并对外延III-V的晶体质量进行了广泛的研究。最后,我们设计并制造了纯InP和InP / InGaAs激光器,并在脉冲光激发下在900 nm波段和1500 nm波段均实现了室温激射。这些平面内和无缓冲1.5 µm III-V激光器在220 nm SOI平台上的直接外延表明与基于Si的光子器件即将接口,并随后实现了完全集成的基于Si的光子电路。
更新日期:2020-02-20
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