Abstract Ferromagnet/two-dimensional transition-metal dichalcogenides (FM/2D-TMDCs) have drawn great attention due to their potential impact in electronics, optoelectronics, and spintronics. However, their fabrication technology is very limited especially when manufacturing of a FM-metal/TMDC-semiconductor element is a purpose. Here, we report a successful demonstration of a NiFe (Py)/2D-TMDC (MoS2) metal/semiconductor bilayer device with a systematic study of its electronic transport and magneto-optical response. The MoS2 with a thickness of 50 nm is grown through electrodeposition technique on a sputter deposited 40 nm Py layer. I-V characterization ultimately demonstrates a Schottky response due to presence of a barrier formed at the interface. Magneto-optical Kerr effect (MOKE) represents a significant amplification as the MoS2 cap-layer formed an optical cavity. In addition, the coercive field of Py/MoS2 bilayer shows a decrease w.r.t. that of the Py layer because of proximity coupling formed at the interface. This study demonstrates not only a successful fabrication of FM-metal/TMDC-semiconductor contact, but also an optical path enhancement due to presence of the TMDC layers for optical and magneto-optical applications.

中文翻译：

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Py/MoS2 双层的电学和磁光表征：磁性金属/半导体异质结构的轻松生长

摘要 铁磁体/二维过渡金属二硫属化物（FM/2D-TMDCs）因其在电子学、光电子学和自旋电子学中的潜在影响而引起了极大的关注。然而，它们的制造技术非常有限，特别是当以制造 FM 金属/TMDC 半导体元件为目的时。在这里，我们报告了 NiFe (Py)/2D-TMDC (MoS2) 金属/半导体双层器件的成功演示，并对其电子传输和磁光响应进行了系统研究。厚度为 50 nm 的 MoS2 通过电沉积技术在溅射沉积的 40 nm Py 层上生长。由于在界面处形成的势垒的存在，IV 表征最终证明了肖特基响应。磁光克尔效应 (MOKE) 代表了显着的放大，因为 MoS2 帽层形成了一个光学腔。此外，由于在界面处形成邻近耦合，Py/MoS2 双层的矫顽场表现出比 Py 层的矫顽力减小。这项研究不仅证明了 FM 金属/TMDC 半导体接触的成功制造，而且由于存在用于光学和磁光应用的 TMDC 层，光路增强。