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Extraordinary Strong Band‐Edge Absorption in Distorted Chalcogenide Perovskites
Solar RRL ( IF 7.9 ) Pub Date : 2020-01-29 , DOI: 10.1002/solr.201900555
Yukinori Nishigaki 1 , Takayuki Nagai 2 , Mitsutoshi Nishiwaki 1 , Takuma Aizawa 3 , Masayuki Kozawa 1 , Kota Hanzawa 3 , Yoshitsune Kato 1 , Hitoshi Sai 4 , Hidenori Hiramatsu 2, 3 , Hideo Hosono 2 , Hiroyuki Fujiwara 1
Affiliation  

All existing solar cell materials including hybrid perovskites show rather small absorption coefficient (α) of ≈104 cm−1 in the bandgap (Eg) transition region. The weak band‐edge light absorption is an essential problem, limiting conversion efficiency particularly in a tandem solar cell. Herein, all distorted chalcogenide perovskites (BaZrS3, SrZrS3, BaHfS3, and SrHfS3) are found experimentally to exhibit extraordinary high α exceeding 105 cm−1 near Eg, indicating the highest band‐edge α among all known solar cell materials. The giant absorption in the Eg region, which is consistent with the first principles, arises from the intense p–d interband transition enabled by dense S 3p valence states. For solar cell application, low‐gap BaZrS3 derivatives, Ba(Zr,Ti)S3 and BaZr(S,Se)3, are further synthesized. Among the possible candidates of top‐cell materials, an earth‐abundant and nontoxic Ba(Zr,Ti)S3 alloy shows great potential, reaching a maximum potential efficiency exceeding 38% in a chalcogenide perovskite/crystalline Si tandem architecture.

中文翻译:

畸变硫属钙钛矿中异常强的带边吸收

所有现有的包括杂化钙钛矿的太阳能电池材料在带隙(E g)过渡区域均显示约10 4  cm -1的较小吸收系数(α)。弱的带边光吸收是一个基本问题,特别是在串联太阳能电池中,这限制了转换效率。在本文中,实验发现所有扭曲的硫族化物钙钛矿(BaZrS 3,SrZrS 3,BaHfS 3和SrHfS 3)在E g附近均显示出异常高的α值,超过10 5  cm -1,这表明带边缘的α值最高在所有已知的太阳能电池材料中。E g区的巨大吸收与第一个原理一致,这是由密集的S 3p价态引起的强烈的p-d带间跃迁引起的。对于太阳能电池应用,可以进一步合成低能隙BaZrS 3衍生物Ba(Zr,Ti)S 3和BaZr(S,Se)3。在可能用作顶层电池材料的候选材料中,富含稀土且无毒的Ba(Zr,Ti)S 3合金显示出巨大的潜力,在硫属钙钛矿/晶体硅串联结构中,其最大潜在效率超过38%。
更新日期:2020-01-29
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