Emerging research in 2D materials has promoted the development of nanoelectronics. Ferromagnetic van der Waals (vdW) layered materials can be utilized to implement ultrathin spintronic devices with new functionalities. The theoretical investigation of 2D vdW scattering spin filters and magnetic tunnel junctions consisting of atomically thin Fe₃GeTe₂ (FGT) are reported. By the nonequilibrium Green's function technique, the spin polarization of ballistic transport through single‐/double‐layer FGT sandwiched between two Cu electrodes is predicted to be 53/85%. In ultrathin FGT‐hBN‐FGT heterostructures, remarkable magnetoresistance is observed, in which maximum (minimum) resistance occurs when the magnetization of two FGT layers is parallel (antiparallel) to each other. For heterostructures consisting of single‐/double‐layer FGT, the magnetoresistance reaches 183/252% at zero‐bias limit. The parallel state of a FGT magnetic tunnel junction exhibits spin polarization larger than 75%. These results suggest the application of magnetic vdW layered materials in ultrathin spintronics.

中文翻译：

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铁磁二维范德华材料实现的超薄散射自旋滤波器与磁隧道结

2D材料的新兴研究促进了纳米电子学的发展。铁磁性范德华（vdW）分层材料可用于实现具有新功能的超薄自旋电子器件。二维vdW散射自旋滤波器和原子薄Fe ₃ GeTe ₂组成的磁隧道结的理论研究（FGT）。通过非平衡格林函数技术，通过夹在两个铜电极之间的单/双层FGT的弹道传输的自旋极化预计为53/85％。在超薄FGT-hBN-FGT异质结构中，观察到了显着的磁阻，其中当两个FGT层的磁化彼此平行（反平行）时，会出现最大（最小）电阻。对于由单层/双层FGT组成的异质结构，在零偏置极限处，磁阻达到183/252％。FGT磁性隧道结的平行状态表现出大于75％的自旋极化。这些结果表明磁性vdW层状材料在超薄自旋电子学中的应用。