Here, we report our studies on the continuous loading of a U-magnetooptical trap (U-MOT) on atom-chip from background rubidium (Rb) vapor generated using a dispenser source in ultra high vacuum (UHV) environment. Using the U-MOT loading curves, the partial pressure due to Rb vapor and pressure due to background gas have been estimated near the MOT cloud position. The estimated pressure due to Rb vapor increased from ∼ 1.4 × 10 Torr to ∼ 4.1 × 10 Torr as Rb-dispenser current was increased from 2.8 to 3.4 A. The increase in dispenser current also resulted in decrease in loading as well as lifetime of the MOT cloud. This study is useful for magnetic trapping experiments where accurate information of pressure in chamber is important for the lifetime of the magnetic trap.

中文翻译：

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在超高真空中在原子芯片上连续加载 U 型磁光阱

在这里，我们报告了我们在超高真空 (UHV) 环境中使用分配器源产生的背景铷 (Rb) 蒸气在原子芯片上连续加载 U 磁光阱 (U-MOT) 的研究。使用 U-MOT 加载曲线，已经估计了 MOT 云位置附近的 Rb 蒸汽分压和背景气体压力。随着 Rb 分配器电流从 2.8 A 增加到 3.4 A，Rb 蒸气引起的估计压力从 ~ 1.4 × 10 Torr 增加到 ~ 4.1 × 10 Torr。 MOT 云。这项研究对于磁阱实验很有用，在这些实验中，腔内压力的准确信息对磁阱的寿命很重要。