This work reports the effect of different processing parameters on the structural and morphological characteristics of MoSe2 layers grown by chemical vapour deposition (CVD), using MoO3 and Se powders as solid precursors. It shows the strong dependence of the size, shape and thickness of the MoSe2 layers on the processing parameters. The morphology of the samples was investigated by field emission scanning electron microscopy (FESEM) and the thickness of the deposited layers was determined by atomic force microscopy (AFM). Raman and photoluminescence (PL) spectroscopies were used to confirm the high quality of the MoSe2 layers. Surface composition was examined by photoelectron spectroscopy (XPS). Moreover, the MoSe2/SiOx/Si heterojunctions exhibit diode behaviour, with a rectification ratio of 10, measured at ±2.0 V, which is due to the p-i-n heterojunctions formed at the p-Si/SiOx/MoSe2 interface. A photovoltaic effect was observed with a short circuit current density (Jsc), open circuit voltage (VOC) and efficiency of -0.80 mA/cm2, 1.55 V and 0.5%, respectively. These results provide a guide for the preparation of p-i-n heterojunctions based on few-layer MoSe2 with improved photovoltaic response.

中文翻译：

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MoSe2 / SiOx / Si异质结的形貌，光学和光伏特性。

这项工作报告了不同的加工参数对以MoO3和Se粉为固体前体的化学气相沉积（CVD）生长的MoSe2层的结构和形态特征的影响。它显示了MoSe2层的尺寸，形状和厚度强烈依赖于加工参数。通过场发射扫描电子显微镜（FESEM）研究样品的形态，并通过原子力显微镜（AFM）确定沉积层的厚度。拉曼光谱和光致发光（PL）光谱用于确认MoSe2层的高质量。通过光电子能谱（XPS）检查表面组成。此外，MoSe2 / SiOx / Si异质结表现出二极管特性，在±2.0 V时测得的整流比为10，这是由于在p-Si / SiOx / MoSe2界面上形成了引脚异质结。观察到光伏效应，其短路电流密度（Jsc），开路电压（VOC）和效率分别为-0.80 mA / cm2、1.55 V和0.5％。这些结果为基于具有改善的光伏响应的几层MoSe2制备引脚异质结提供了指南。