2D molybdenum ditelluride (MoTe₂) has recently received significant attention due to its unique phase transition and ambipolar behavior as well as thickness‐dependent bandgap. The phase transition and electrical breakdown of various thickness MoTe₂ field‐effect transistors observed under high electric fields are addressed. Interestingly, the MoTe₂ exhibits phase transition from a semiconducting 2H phase to a metallic 1T′ almost simultaneously with electrical breakdown, and this is confirmed by a Raman peak of 1T′‐MoTe₂ at 125 cm⁻¹. Using Raman mapping results of MoTe₂ FETs obtained after the breakdown, it is revealed that the phase transition is initiated from the metal contacting electrode regions of source and drain. All the Raman peaks of MoTe₂ shifted to low frequency with increasing drain voltage. Based on the Raman peak shifts, the temperature change in the MoTe₂ FETs while device operation is in progress is estimated. The maximum temperature and dissipated power of a tri‐layer MoTe₂ device are found to reach 495 K and 5.85 mW, respectively, at an electric field of 6.5 V µm⁻¹. This research provides guidelines for circuit design toward the application of 2D semiconductor devices, related to the energy dissipation and electrical breakdown unique to 2D phase transitional materials.

中文翻译：

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MoTe2的高电场诱导相变和电击穿

二维二碲化钼（MoTe ₂）最近因其独特的相变和双极性行为以及与厚度有关的带隙而备受关注。解决了在高电场下观察到的各种厚度的MoTe ₂场效应晶体管的相变和电击穿。有趣的是，MoTe ₂在电击穿的同时几乎表现出从半导体2H相到金属1T'的相变，这可以通过在125 cm ^-1处的1T'-MoTe ₂拉曼峰来证实。使用MoTe _2的拉曼映射结果击穿后获得的FET揭示出，相变是从源极和漏极的金属接触电极区域开始的。随着漏极电压的增加，MoTe _2的所有拉曼峰都移至低频。根据拉曼峰位移，可以估算出器件运行过程中MoTe ₂ FET的温度变化。发现在6.5 V µm ^-1的电场下，三层MoTe ₂器件的最高温度和耗散功率分别达到495 K和5.85 mW 。这项研究为2D半导体器件的应用提供了电路设计指南，涉及2D相变材料特有的能量耗散和电击穿。