Abstract In this paper, photoresistive properties in pristine and homogeneously boron and nitrogen doped semiconducting single-walled carbon nanotubes is studied. The calculations are based on density functional theory in combination with Non-Equilibrium Greens Function formalism. The resistance in the SWCNT models is found to decrease with the increasing flux levels. At low electrode voltages, nitrogen doped model shows more photoresistive effect while at high electrode voltages, the most significant photoresistive effect is found in boron doped model. The study reveals that the resistance of the proposed SWCNT systems is dependent on the light intensity, and the conventional boron and nitrogen doping increases the photoresistance by manifold. The models are promising for wide range of applications in the future electronic industry.

中文翻译：

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用于光敏电阻应用的碳纳米管的计算建模

摘要 本文研究了原始且均匀的硼和氮掺杂半导体单壁碳纳米管的光阻特性。计算基于密度泛函理论结合非平衡格林函数形式主义。发现 SWCNT 模型中的电阻随着通量水平的增加而降低。在低电极电压下，氮掺杂模型表现出更多的光阻效应，而在高电极电压下，硼掺杂模型显示出最显着的光阻效应。研究表明，所提出的 SWCNT 系统的电阻取决于光强度，而传统的硼和氮掺杂通过多种方式增加了光阻。这些模型有望在未来的电子行业中广泛应用。