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A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss
Journal of Lightwave Technology ( IF 4.7 ) Pub Date : 2020-01-15 , DOI: 10.1109/jlt.2019.2945678
Nicolas Dupuis , Fuad Doany , Russell A. Budd , Laurent Schares , Christian W. Baks , Daniel M. Kuchta , Takako Hirokawa , Benjamin G. Lee

We present a strictly nonblocking $4$ × $4$ electrooptic silicon photonic switch fabric with on-chip gain. The switch integrates 12 Mach-Zehnder cells in a 3-stage topology equipped with fast electrooptic phase shifters, and thermooptic phase trimmers. To compensate for the losses of the fabric, a 4-channel GaInAsP/InP semiconductor optical amplifier array is flip-chip attached into an etched cavity in the silicon photonic chip with butt-coupled waveguide interfaces. The chip is wirebonded to a CMOS driver that provides push-pull drive to each elementary Mach-Zehnder cell. We demonstrate an optical switch assembly with net neutral insertion loss in the C-band together with nanosecond-scale reconfiguration time.

中文翻译:

一种具有净中性插入损耗的 4×4 电光硅光子开关结构

我们提出了一种具有片上增益的严格无阻塞 4 美元 × 4 美元的光电硅光子开关结构。该开关在配备快速电光移相器和热光相位微调器的 3 级拓扑结构中集成了 12 个马赫曾德单元。为了补偿织物的损耗,将 4 通道 GaInAsP/InP 半导体光放大器阵列倒装芯片连接到硅光子芯片中的蚀刻腔中,该腔具有对接耦合波导接口。该芯片通过引线键合到 CMOS 驱动器,该驱动器为每个基本的 Mach-Zehnder 单元提供推挽驱动。我们展示了在 C 波段具有净中性插入损耗以及纳秒级重构时间的光开关组件。
更新日期:2020-01-15
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