We fabricate and characterize a polarization-diversity 32 × 32 silicon photonics switch by newly introducing SiN overpass waveguides onto our nonduplicate polarization-diversity path-independent insertion-loss switch. The SiN overpass waveguides are used to simplify the optical paths with a uniform path length between the edge couplers and the switch matrix and significantly reduce the number of waveguide intersections. The switch chip is fabricated using a 300-mm silicon-on-insulator wafer pilot line. The fabricated switch comprises more than 7,600 components, making this the largest ever complementary-metal-oxide-semiconductor-based silicon photonics circuit. The switch chip is electrically and optically packaged and evaluated for a sampled port connection with 32 paths, with an average on-chip loss of ∼35 dB and an average polarization-dependent loss of 3.2 dB where 75% of the measured paths exhibit a loss of less than 3 dB. The differential group delay is measured to be 1.7 ps. The performance can be further improved by optimizing the device design.

中文翻译：

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基于 SiN/Si 双层平台的非重复极化分集 32 × 32 硅光子开关

我们通过将 SiN 超通波导新引入我们的非重复偏振分集路径独立插入损耗开关来制造和表征偏振分集 32 × 32 硅光子开关。SiN 超通波导用于简化光路，边缘耦合器和开关矩阵之间的路径长度一致，并显着减少了波导交叉点的数量。开关芯片是使用 300 毫米绝缘体上硅晶圆试生产线制造的。制造的开关包含 7,600 多个组件，使其成为有史以来最大的基于互补金属氧化物半导体的硅光子电路。开关芯片经过电气和光学封装，并针对具有 32 个路径的采样端口连接进行评估，平均片上损耗约为 35 dB，平均极化相关损耗为 3.2 dB，其中 75% 的测量路径的损耗小于 3 dB。测得的差分群延迟为 1.7 ps。通过优化器件设计可以进一步提高性能。