Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach—Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (VπL = 63 V.μm). This is achieved by (i) selecting a strong index changing material (ITO) and (ii) improving the field-overlap as verified by the electrostatic field lines. Furthermore, we show that this platform serves as a building block in an end-fire silicon photonics optical phased array (OPA) with a half-wavelength pitch within the waveguides with anticipated performance, including narrow main beam lobe (<3°) and >10 dB suppression of the side lobes, while electrostatically steering the emission profile up to ±80°, and if further engineered, can lead not only towards nanosecond-fast beam steering capabilities in LiDAR systems but also in holographic display, free-space optical communications, and optical switches.

中文翻译：

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用于光束转向的横向 MOS 电容器启用 ITO Mach-Zehnder 调制器

在这里，我们通过实验展示了一种异质集成在硅光子学中的氧化铟锡 (ITO) 马赫-曾德尔干涉仪。移相器部分采用新型横向 MOS 配置实现，由于有利的静电重叠，可实现高效调制 (VπL = 63 V.μm)。这是通过 (i) 选择强折射率变化材料 (ITO) 和 (ii) 如静电场线所验证的那样改善场重叠来实现的。此外，我们展示了该平台作为端射硅光子光学相控阵 (OPA) 的构建块，在波导内具有半波长间距，具有预期的性能，包括窄主波瓣 (<3°) 和 >对旁瓣进行 10 dB 抑制，同时以静电方式将发射分布控制在 ±80°，如果进一步设计，