Two‐dimensional (2D) transition metal dichalcogenide has attracted significant attention recently due to its unique electrical and optical properties. However, MoS₂ nanosheets fabricated by traditional methods exhibit poor electrical performance due to the existence of the 1T metal phase. A solution‐processable pure 2H semiconductor phase MoS₂ nanosheet for use as the functional layer of high‐performance memristors is presented. The resulting memristor based on a Ag/MoS₂/Pt structure exhibits excellent resistive switching properties including high endurance and multilevel retention. Moreover, the power consumption and programming current of the SET operation can be as low as 7.35 nW and 100 nA, respectively. Interestingly, it is demonstrated that the resistance of the Ag/MoS₂/Pt device can be bidirectionally modulated over a wide range (pulse number >500) with an approximately linear trend. Furthermore, the accuracy of pattern recognition with handwritten data can reach 90.37%. This work provides a simple and practical method for the realization of fabrication of pure 2H‐MoS₂ and application in biological neural computing systems.

中文翻译：

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具有低功耗和线性多级存储的纯2H-MoS2纳米片忆阻器，用于人工突触仿真器

二维（2D）过渡金属二卤化硅因其独特的电学和光学特性而受到了广泛关注。然而，由于1T金属相的存在，通过传统方法制造的MoS ₂纳米片表现出较差的电性能。提出了一种可溶液处理的纯2H半导体相MoS ₂纳米片，用作高性能忆阻器的功能层。基于Ag / MoS _2的忆阻器/ Pt结构具有出色的电阻切换特性，包括高耐久性和多级保留。此外，SET操作的功耗和编程电流可以分别低至7.35 nW和100 nA。有趣的是，已证明Ag / MoS ₂ / Pt器件的电阻可以在宽范围内（脉冲数> 500）以近似线性趋势双向调制。此外，手写数据模式识别的准确性可以达到90.37％。这项工作为实现纯2H-MoS ₂的制备及其在生物神经计算系统中的应用提供了一种简单实用的方法。