It is demonstrated that a heme protein (cytochrome c [Cyt c]) nanosphere plays a strong anchoring role in binding hydroxyl groups of poly(vinyl alcohol) (PVA) leading to outstanding high‐temperature (100 °C) retention characteristics of transistor‐type organic memory devices (TOMDs). The PVA:Cyt c layers are spin‐coated on indium tin oxide gate electrodes from aqueous solutions with various Cyt c contents up to 50 wt%, followed by the formation of poly(3‐hexylthiophene) (P3HT) channel layers and nickel/aluminum top source/drain electrodes in TOMDs. Results show that adding 20 wt% Cyt c improves the drain current of devices in the presence of good hysteresis characteristics, which are maintained even after exposure to high‐temperature conditions (100 °C). The excellent conservation of hysteresis characteristics is attributed to the formation of Cyt c nanospheres that act as an anchoring point to retard the relaxation of PVA chains via specific interactions (hydrogen bonding etc.) between amino groups in the Cyt c nanosphere surfaces and hydroxyl groups in the PVA chains. The optimized PVA:Cyt c layers (20 wt% Cyt c, thermal treatment at 100 °C) deliver excellent retention characteristics to TOMDs, whereas no memory function is measured in the case of the pristine PVA layers at 100 °C.

中文翻译：

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蛋白质纳米球锚固剂，用于稳定具有出色保留特性的有机存储晶体管中的羟基化聚合物链

结果表明，血红素蛋白（细胞色素c [Cyt c]）纳米球在结合聚乙烯醇（PVA）的羟基上起着很强的锚定作用，从而导致晶体管的出色的高温（100°C）保留特性类型有机存储设备（TOMD）。将PVA：Cyt c层旋涂在铟锡氧化物栅电极上，其水溶液中各种Cyt c含量高达50 wt％，然后形成聚（3-己基噻吩）（P3HT）通道层和镍/铝TOMD中的顶部源/漏电极。结果表明，在具有良好的磁滞特性的情况下，添加20 wt％的Cyt c可以改善器件的漏极电流，即使在暴露于高温条件（100°C）后也可以保持这种特性。滞后特性的优异保存归因于Cyt c纳米球的形成，该Cyt c纳米球充当锚点，通过Cyt c纳米球表面中的氨基与羟基之间的特定相互作用（氢键等）阻止PVA链的松弛。 PVA链。优化的PVA：Cyt c层（20 wt％Cyt c，在100°C时进行热处理）为TOMD提供了出色的保留特性，而在100°C的原始PVA层中未测量到记忆功能。