The controlled growth of chalcogenide nanoscaled phase change material structures can be important to facilitate integration and to enable complex architectures for phase change memory and other microelectronic applications. Here, the growth of Sb–Te and In–Ge–Te alloys by metal–organic chemical vapour deposition (MOCVD) on patterned substrates featured with an array of recesses (~130 nm features width) was investigated. High selectivity, with preferential growth on a CoSi 2 metallic layer at the recess bottom with respect to the surrounding SiO 2 masking layer, was obtained, leading to a single-step fabrication of arrays of high-aspect-ratio chalcogenide nanostructures. The growth selectivity, as well as the morphology, composition and microstructure of the grown nanostructures, as a function of the different MOCVD process parameters, were investigated by scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, Ra...

中文翻译：

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通过选择性MOCVD制备有序的Sb-Te和In-Ge-Te纳米结构

硫族化物纳米级相变材料结构的受控生长对于促进集成和实现用于相变存储器和其他微电子应用的复杂体系结构可能很重要。在这里，研究了通过金属有机化学气相沉积（MOCVD）在具有凹口阵列（特征宽度约130 nm）的图案化基材上生长Sb-Te和In-Ge-Te合金的过程。获得了高选择性，相对于周围的SiO 2掩模层，在凹部底部的CoSi 2金属层上优先生长，从而实现了高纵横比硫族化物纳米结构阵列的一步制造。生长选择性以及生长的纳米结构的形态，组成和微观结构，取决于不同的MOCVD工艺参数，