Abstract Sputter deposited AlScN films with an Sc content of 38 at. % were investigated by X-ray diffraction and electron microscopy to study the influence of the radio frequency (RF) bias on the growth of abnormally oriented grains (AOG). Scanning electron microscopy investigations showed that the nucleation and growth of AOGs occurs with applied negative RF-bias till 4 W (51 mW/cm2), while the complete loss of AOGs happens at biases larger than 6 W (76 mW/cm2). The lack of AOGs within the film occurs together with the loss of the preferred (0001)-texture. At high bias powers, the (0001)-texture nucleates due to the strong (111)-texture of Pt-layer, but grain orientation becomes random during growth. The change of film microstructure with higher biases is reflected in the decay of piezoelectric properties. The concentration of trapped Ar atoms into the films increased with increasing bias power. The variation of the Ar-content along the film cross-section was ascribed to RF bias instabilities.

中文翻译：

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负偏压通过Al0.62Sc0.38N薄膜中异常取向晶粒的发生对压电性能的影响

摘要 溅射沉积的 AlScN 薄膜，Sc 含量为 38 at。通过 X 射线衍射和电子显微镜研究了 %，以研究射频 (RF) 偏置对异常取向晶粒 (AOG) 生长的影响。扫描电子显微镜研究表明，AOG 的成核和生长发生在施加负 RF 偏置直到 4 W (51 mW/cm2) 时，而 AOG 的完全损失发生在偏置大于 6 W (76 mW/cm2) 时。薄膜中 AOG 的缺乏与优选的 (0001) 纹理的损失一起发生。在高偏置功率下，由于 Pt 层的强 (111) 纹理，(0001) 纹理成核，但晶粒取向在生长过程中变得随机。具有较高偏置的薄膜微观结构的变化反映在压电性能的衰减上。随着偏置功率的增加，薄膜中被捕获的 Ar 原子的浓度增加。Ar 含量沿薄膜横截面的变化归因于 RF 偏置不稳定性。