The supercapacitive performance of two-dimensional (2D) MoS₂ nanomaterials strongly depends on the interlayer spacing and edge orientation, which remains a formidable challenge. Herein, we demonstrate a sheet-on-sheet 2D heterostructure with edge-terminated and interlayer-expanded MoS₂ few-layered nanosheets on graphene. The preferential (002) edge orientation with an expanded interlayer spacing of 0.98 nm enables easy insertion of ions into the MoS₂ nanosheets. The intimate connection with conductive graphene further expedites the electrochemical kinetics by promoting electron/ion transport and structural stability. As a result, the MoS₂@graphene nanoarchitecture can deliver a high specific capacitance of 428 F g^-1 at 1 A g^-1 along with superior rate and long-term durability, which is among the best performance reported so far. The present work highlights the importance of engineering edge-oriented and interlayer-expanded 2D materials for their promising use toward high-performance supercapacitors.

二维（2D）MoS ₂纳米材料的超电容性能在很大程度上取决于层间间距和边缘方向，这仍然是一个艰巨的挑战。在这里，我们演示了在石墨烯上具有边缘终止和层间扩展的MoS ₂几层纳米片的片上片二维异质结构。具有扩展的0.98 nm的层间间距的优先（002）边缘方向使离子易于插入MoS ₂纳米片中。与导电石墨烯的紧密连接通过促进电子/离子传输和结构稳定性进一步加快了电化学动力学。结果，MoS ₂ @石墨烯纳米结构可以提供428 F g ^-1的高比电容在1 A g ^-1下具有优异的速率和长期耐用性，这是迄今为止报道的最佳性能之一。本工作强调了面向边缘和层间扩展2D材料的工程技术对于它们对高性能超级电容器的应用前景的重要性。