Abstract CrSi2 ingots were grown by the Vertical Gradient Freeze (VGF) method in silica (SiO2) crucibles with boron nitride (BN) coating and in pyrolytic boron nitride (pBN) crucibles in order to minimize the sticking and the reaction with the molten Cr-Si alloy. High quality chromium disilicide single crystal was obtained with a mosaicity of 1–2° using pBN crucible with a thermal gradient of 0.6 K/mm and a growth rate of 10 mm/h. To recycle the crucibles and so to reduce the production costs, pBN crucibles were cleaned with hydrofluoric acid solution. As a result of this treatment, it was not possible to obtain CrSi2 single crystals due to a modification of the crucible surface and the subsequent increase of boron compounds in the melt during the growth. The effect of the growth conditions on the microstructure of polycrystalline sample was also investigated using the texture analysis technique.

中文翻译：

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垂直梯度冷冻法生长的厘米级 CrSi2 晶体

摘要 CrSi2 锭通过垂直梯度冷冻 (VGF) 方法在具有氮化硼 (BN) 涂层的二氧化硅 (SiO2) 坩埚和热解氮化硼 (pBN) 坩埚中生长，以尽量减少粘附和与熔融 Cr-的反应。硅合金。使用 pBN 坩埚以 0.6 K/mm 的热梯度和 10 mm/h 的生长速率获得镶嵌度为 1-2° 的高质量二硅化铬单晶。为了回收坩埚以降低生产成本，用氢氟酸溶液清洗 pBN 坩埚。作为这种处理的结果，由于坩埚表面的改变和随后在生长过程中熔体中硼化合物的增加，不可能获得 CrSi2 单晶。