Abstract Pr-doped ZnO thin films (Zn1−xPrxO) (x = 0.00, 0.01, 0.02, 0.04) were prepared on fluorine-doped tin oxide substrates by means of the sol–gel method and spin coating technology, followed by rapid thermal annealing treatment at 800 °C. The influence of Pr content on the structural and optical properties of the Zn1−xPrxO thin film was examined and discussed. The wurtzite hexagonal structural characteristics were investigated by X-ray diffraction analysis, and Pr3+ substitution for Zn2+ ions was indicated. Finally, the typical bipolar current-voltage switching curves and electrical conduction model of Zn1−xPrxO film resistive random access memory devices were discussed and investigated for low resistance state/high resistance state in the initial forming process.

中文翻译：

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透明 Pr 掺杂 ZnO 基电阻随机存取存储器的电阻开关行为和光学特性

摘要 采用溶胶-凝胶法和旋涂技术，在掺氟氧化锡基底上制备了掺镨ZnO薄膜（Zn1−xPrxO）（x = 0.00, 0.01, 0.02, 0.04），然后快速热退火800℃处理。检查和讨论了 Pr 含量对 Zn1-xPrxO 薄膜的结构和光学性能的影响。通过X射线衍射分析研究了纤锌矿六方结构特征，表明Pr3+取代了Zn2+离子。最后，讨论和研究了 Zn1-xPrxO 薄膜电阻随机存取存储器件的典型双极电流-电压切换曲线和导电模型，并研究了初始形成过程中的低阻态/高阻态。