ZnO is a significant I I-V I n-type direct bandgap semiconductor material which has shown great attention because of its applications in light-transmitting diodes and photograph detectors. In the present investigation, Al₂O₃ doped ZnO nanoparticles were prepared by co-precipitation technique utilizing PVA as a host polymer. X-ray diffraction studies revealed the cubic structure of nanoparticles. The determined normal crystallite size of Al₂O₃ doped PVA capped ZnO nanoparticles was around 12 nm. SEM image showed that the nanoparticles were distributed uniformly with small sized grains consisting of nano dots like tips due to the agglomeration of particles. FTIR demonstrated the trademark vibrational modes of constituent components in the host matrix. The optical studies of all samples displayed close band edge retention at 351 nm (3.26 eV). From the DC studies the conductivity was found to be 3.24 × 10⁻³ S/cm. EPR studies revealed the crystalline structure and coordination/neighbourhood site evenness of Al₂O₃ doped ZnO in the host lattice. Photoluminescence studies of Al₂O₃ doped PVA capped ZnO nanoparticles demonstrated two groups at 416 and 619 nm. The main band was seen in violet and other band in blue region. These studies revealed that the Al₂O₃ doped PVA capped ZnO nanoparticles materials can be used as LEDs, electroluminescence boards and plasma devices.

ZnO是一种重要的I IV I n型直接带隙半导体材料，由于其在透光二极管和照片检测器中的应用而备受关注。在本研究中，通过共沉淀技术利用PVA作为主体聚合物制备了掺杂Al ₂ O _3的ZnO纳米颗粒。X射线衍射研究揭示了纳米颗粒的立方结构。确定的Al ₂ O _3的正常微晶尺寸掺杂的PVA包覆的ZnO纳米粒子约为12 nm。SEM图像表明，由于颗粒的团聚，纳米颗粒均匀地分布着由纳米点如尖端组成的小尺寸颗粒。FTIR证明了基质中各组成成分的商标振动模式。所有样品的光学研究均显示了在351 nm（3.26 eV）处的近谱带边缘保留。通过DC研究，发现电导率为3.24×10 ^-3 S / cm。EPR研究表明，主晶格中Al ₂ O ₃掺杂的ZnO的晶体结构和配位/邻近位点均匀性。Al ₂ O _3的光致发光研究掺杂PVA的ZnO纳米颗粒在416和619 nm处显示两组。主带为紫色，其他带为蓝色。这些研究表明，Al ₂ O ₃掺杂的PVA包覆的ZnO纳米颗粒材料可以用作LED，电致发光板和等离子器件。