Localized surface plasmon resonances (LSPRs) are gaining considerable attention due to the unique far-field and near-field optical properties and applications. Additionally, the Fermi energy, which is the chemical potential, of plasmonic nanoparticles is one of the key properties to control hot-electron and -hole transfer at the interface between plasmonic nanoparticles and a semiconductor. In this article, we tried to control the diffusion potential of the plasmonic system by manipulating the interface dipole. We fabricated solid-state photoelectric conversion devices in which gold nanoparticles (Au-NPs) are located between strontium titanate (SrTiO3) as an electron transfer material and nickel oxide (NiO) as a hole transport material. Lanthanum aluminate as an interface dipole layer was deposited on the atomic layer scale at the three-phase interface of Au-NPs, SrTiO3, and NiO, and the effect was investigated by photoelectric measurements. Importantly, the diffusion potential between the plasmonic metal and a semiconductor can be arbitrarily controlled by the averaged thickness and direction of the interface dipole layer. The insertion of an only one unit cell (uc) interface dipole layer, whose thickness was less than 0.5 nm, dramatically controlled the diffusion potential formed between the plasmonic nanoparticles and surrounding media. This is a new methodology to control the plasmonic potential without applying external stimuli, such as an applied potential or photoirradiation, and without changing the base materials. In particular, it is very beneficial for plasmonic devices in that the interface dipole has the ability not only to decrease but also to increase the open-circuit voltage on the order of several hundreds of millivolts.

中文翻译：

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通过埃厚的界面偶极子层可以任意控制等离子体金属与半导体之间的扩散势。

由于独特的远场和近场光学特性和应用，局部表面等离振子共振（LSPR）得到了极大的关注。另外，等离子体能纳米颗粒的化学势的费米能量是控制等离子体能纳米颗粒与半导体之间的界面处的热电子和空穴传输的关键特性之一。在本文中，我们试图通过操纵界面偶极子来控制等离子体系统的扩散势。我们制造了固态光电转换器件，其中金纳米颗粒（Au-NPs）位于钛酸锶（SrTiO3）作为电子传输材料和氧化镍（NiO）作为空穴传输材料之间。在Au-NPs，SrTiO3和NiO的三相界面上，以原子层级沉积作为界面偶极层的铝酸镧，并通过光电测量研究了该效应。重要的是，等离激元金属与半导体之间的扩散电势可以通过界面偶极层的平均厚度和方向任意控制。仅插入一个厚度小于0.5 nm的单位晶胞（uc）界面偶极子层，可显着控制等离子体纳米粒子与周围介质之间形成的扩散势。这是一种在不施加外部刺激（例如施加电势或光辐照）且不更改基础材料的情况下控制等离子激元势的新方法。特别是，