GeSn is a promising material for the fabrication of on-chip photonic and nanoelectronic devices. Processing techniques dedicated to GeSn have thus been developed, including epitaxy, annealing, ion implantation, and etching. In this work, suspended, strain-relaxed, and high-quality GeSn microdisks are realized by a new approach without any etching to GeSn alloy. The GeSn alloy was grown on pre-patterned Ge (001) substrate by molecular beam epitaxy at low temperatures. The transmission electron microscopy and scanning electron microscopy were carried out to determine the microstructures of the GeSn samples. The microdisks with different diameters of Ge pedestals were fabricated by controlling the selective wet etching time, and micro-Raman results show that the microdisks with different dimensions of the remaining Ge pedestals have different extents of strain relaxation. The compressive strain of microdisks is almost completely relaxed under suitable conditions. The semiconductor processing technology presented in this work can be an alternative method to fabricate innovative GeSn and other materials based micro/nano-structures for a range of Si-compatible photonics, 3D-MOSFETs, and microelectromechanical device applications.

中文翻译：

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通过集成选择性外延生长和选择性湿法刻蚀制造高质量和应变松弛的GeSn微盘。

GeSn是用于制造片上光子和纳米电子器件的有前途的材料。因此已经开发出专用于GeSn的处理技术，包括外延，退火，离子注入和蚀刻。在这项工作中，通过一种新方法实现了悬挂的，应变松弛的高质量GeSn微型磁盘，而无需对GeSn合金进行任何蚀刻。在低温下，通过分子束外延在预先形成图案的Ge（001）衬底上生长GeSn合金。进行透射电子显微镜和扫描电子显微镜以确定GeSn样品的微观结构。通过控制选择性湿法刻蚀时间，制作了具有不同直径的Ge基座的微盘，微观拉曼试验结果表明，剩余锗基座的不同尺寸的微盘具有不同程度的应变松弛。在合适的条件下，微盘的压缩应变几乎完全放松了。在这项工作中提出的半导体加工技术可以成为制造创新的GeSn和其他基于材料的微/纳米结构的替代方法，用于一系列与Si兼容的光子学，3D-MOSFET和微机电设备的应用。