Multilayer Zn 50 Sb 50 /Ge 8 Sb 92 (ZS/GS) thin films were proposed and fabricated by alternate sputtering. The crystallization behaviors of nanocomposite ZS/GS thin films induced by heating were investigated by in situ resistance measurement. The crystallization behaviors of ZS/GS thin films can be regulated by tuning the thickness ratio and periods. The multilayer [ZS (8 nm)/GS (4 nm)] 4 ([ZS(8)/GS(4)] 4 ) thin film exhibits a high crystallization temperature (~ 245 °C), a large crystallization activation energy (2.61 eV), and high data retention ability (168 °C). The phase structure and thickness variation of the [ZS(8)/GS(4)] 4 thin film were analyzed through x-ray diffraction (XRD) and x-ray reflection (XRR), respectively. The volume shrinkage during crystallization was as small as 3.9%. The multilayer structure and interface stability were confirmed by using transmission electron microscopy (TEM). A p...

中文翻译：

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锌锑锗锑纳米复合多层相变薄膜的结晶行为和结构研究

提出并通过交替溅射制备多层Zn 50 Sb 50 / Ge 8 Sb 92（ZS / GS）薄膜。通过原位电阻测量研究了纳米复合ZS / GS薄膜在加热条件下的结晶行为。ZS / GS薄膜的结晶行为可以通过调整厚度比和周期来调节。多层[ZS（8 nm）/ GS（4 nm）] 4（[ZS（8）/ GS（4）] 4）薄膜具有较高的结晶温度（〜245°C），较大的结晶活化能（ 2.61 eV）和高数据保留能力（168°C）。[ZS（8）/ GS（4）] 4薄膜的相结构和厚度变化分别通过X射线衍射（XRD）和X射线反射（XRR）分析。结晶过程中的体积收缩率小至3.9％。通过使用透射电子显微镜（TEM）证实了多层结构和界面稳定性。一个...