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Wave-guided Lateral-configured Ge-Ge-Si Photodetectors Obtained by Rapid Melting Growth Technique
IEEE Photonics Technology Letters ( IF 2.6 ) Pub Date : 2020-02-01 , DOI: 10.1109/lpt.2020.2964844 Cheng-Lun Hsin , Yu-Shin Tsai , Yi-Chen Lee , Song-Lin Lin
IEEE Photonics Technology Letters ( IF 2.6 ) Pub Date : 2020-02-01 , DOI: 10.1109/lpt.2020.2964844 Cheng-Lun Hsin , Yu-Shin Tsai , Yi-Chen Lee , Song-Lin Lin
The synergy of photonic and electronic signal transmission in the near-infrared spectrum is an ideal solution for optoelectronic integrated circuits in high-speed communication systems. In this study, we fabricated high-quality germanium mesa on Si by rapid-melting growth technique for a PIN photodetector. The quality of Ge was investigated through standard Raman spectroscopy and electronic microscopy. Rather than a single-crystalline Ge mesa, a polycrystalline structure differs from those of our previous reports, and may be caused by the multiple vicinities with oxide and Si. Ge/Ge/Si PIN photodetector and a Si waveguide was fabricated and measured to study the photodetector’s I-V characteristics at near-infrared spectrum. The normalized power-dependent current enhancement and photoresponsivity were investigated to reveal the effect of Ge mesa quality. This study demonstrated that a high-quality Ge mesa can be employed for optoelectronic integrated circuit with high photoelectric conversion efficiency and responsivity by a Si-based integrated circuit fabrication process.
中文翻译:
快速熔化生长技术获得的波导横向配置Ge-Ge-Si光电探测器
近红外光谱中光子和电子信号传输的协同作用是高速通信系统中光电集成电路的理想解决方案。在这项研究中,我们通过用于 PIN 光电探测器的快速熔化生长技术在 Si 上制造了高质量的锗台面。通过标准拉曼光谱和电子显微镜研究锗的质量。多晶结构与我们之前报道的不同,而不是单晶 Ge 台面,多晶结构可能是由氧化物和 Si 的多个附近引起的。制造并测量了 Ge/Ge/Si PIN 光电探测器和 Si 波导,以研究光电探测器在近红外光谱下的 IV 特性。研究了归一化功率相关的电流增强和光响应性,以揭示 Ge 台面质量的影响。该研究表明,通过硅基集成电路制造工艺,可以将高质量的 Ge 台面用于具有高光电转换效率和响应度的光电集成电路。
更新日期:2020-02-01
中文翻译:
快速熔化生长技术获得的波导横向配置Ge-Ge-Si光电探测器
近红外光谱中光子和电子信号传输的协同作用是高速通信系统中光电集成电路的理想解决方案。在这项研究中,我们通过用于 PIN 光电探测器的快速熔化生长技术在 Si 上制造了高质量的锗台面。通过标准拉曼光谱和电子显微镜研究锗的质量。多晶结构与我们之前报道的不同,而不是单晶 Ge 台面,多晶结构可能是由氧化物和 Si 的多个附近引起的。制造并测量了 Ge/Ge/Si PIN 光电探测器和 Si 波导,以研究光电探测器在近红外光谱下的 IV 特性。研究了归一化功率相关的电流增强和光响应性,以揭示 Ge 台面质量的影响。该研究表明,通过硅基集成电路制造工艺,可以将高质量的 Ge 台面用于具有高光电转换效率和响应度的光电集成电路。