Abstract The growth mode of m-plane AlN crystal grown by physical vapor transport method is studied. The m-plane AlN crystal fabricated by spontaneous nucleation was used as a seed to grow bulk crystal, and 3-mm thick AlN crystals with a maximum lateral dimension of 20 mm were obtained. The Raman tensor elements of A1(TO), E2(high) and E1(TO) Raman models from the m-plane AlN crystal are investigated by angle-dependent polarized Raman scattering. The Raman tensor comparing with our previous report indicates the possible enhancement of the Raman tensor in the directions vertical to [0002] direction at higher growth temperature.

中文翻译：

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PVT法生长的m-AlN晶体的生长模式和拉曼散射表征

摘要 研究了物理气相输运法生长的m面AlN晶体的生长方式。通过自发成核制造的 m 面 AlN 晶体用作生长块状晶体的种子, 获得了 3 毫米厚的 AlN 晶体, 最大横向尺寸为 20 毫米。来自 m 面 AlN 晶体的 A1(TO)、E2(high) 和 E1(TO) 拉曼模型的拉曼张量元素通过与角度相关的偏振拉曼散射进行研究。与我们之前的报告相比，拉曼张量表明在较高的生长温度下，拉曼张量在垂直于 [0002] 方向的方向上可能会增强。