2D metal thin films attract extensive attention due to their intriguing physiochemical properties and a broad range of promising applications. Typically, 2D metal films are produced via bottom‐up synthetic methods. Herein, a top‐down approach that combines accumulative roll bonding (ARB) technique with selective etching is developed for the large‐scale preparation of 2D Ta films. First, alternatingly stacked 2D Cu/Ta multilayer structures are prepared by ARB. Then, 2D Ta films are achieved by selective chemical etching of the Cu layers. The as‐prepared 2D Ta films with controllable thicknesses range from several tens of micrometers to several tens of nanometers. The thickness of the resultant 2D Ta films can be controlled by ARB technique. Moreover, this top‐down approach can be generalized to fabricate other various 2D metal films with a wide range of dimensions.

中文翻译：

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自顶向下方法大规模制备二维金属膜

二维金属薄膜由于其有趣的理化性质和广泛的应用前景而引起了广泛的关注。通常，二维金属膜是通过自下而上的合成方法生产的。在此，为大规模制备2D Ta膜，开发了一种将累积辊压（ARB）技术与选择性蚀刻相结合的自顶向下方法。首先，通过ARB制备交替堆叠的2D Cu / Ta多层结构。然后，通过选择性化学蚀刻铜层获得二维Ta膜。所制得的2D Ta膜的厚度可控，范围从几十微米到几十纳米。可以通过ARB技术控制所得的2D Ta膜的厚度。此外，