Si doping was used to significantly improve the bias stability of ZnON thin-film transistors. Si 3 W (~1%) doped ZnON TFTs showed a saturation mobility of 19.70 cm2/Vs along with remarkable improvements in the threshold voltage shift for negative gate bias stress (NBS) within 1.69 V. The effects of Si doping were interpreted by the experimental correlation between device performance and physical analysis, as well as by the theoretical calculation. Si doping induces the reduction of N-related defects by increasing stoichiometric Zn3N2, and decreasing nonstoichiometric ZnxNy. In addition, Si doping reduces the band edge states below the conduction band. According to density functional theory (DFT) calculations, Si, when it substitutes for Zn, acts as a carrier suppressor in the ZnON matrix.

中文翻译：

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通过Si掺杂显着增强Zn-ON薄膜晶体管的偏置稳定性。

Si掺杂用于显着提高ZnON薄膜晶体管的偏置稳定性。掺杂Si 3 W（〜1％）的ZnON TFT的饱和迁移率为19.70 cm2 / Vs，并且在1.69 V以内的负栅极偏置应力（NBS）的阈值电压漂移有了显着提高。器件性能与物理分析之间的实验相关性，以及通过理论计算得出的结果。硅掺杂通过增加化学计量的Zn3N2和减少非化学计量的ZnxNy来诱导N相关缺陷的减少。另外，Si掺杂将带边缘状态减小到导带以下。根据密度泛函理论（DFT）计算，当Si代替Zn时，它在ZnON矩阵中充当载流子抑制剂。