Abstract The effect of inductively coupled Ar plasma etching (ICP-Ar) instead of traditional Br–MeOH etching on the performance of CdZnTe detectors was studied. The optimal ICP etching parameters were determined by experiments. The XPS results indicated that the surface composition of CdZnTe etched by ICP-Ar had no obvious TeOx peak and was closer to stoichiometric ratio than that etched by Br–MeOH. The leakage current of ICP-Ar etched CdZnTe surface was significantly reduced, and the detection performance with the energy resolution was improved by 12%, as compared to Br–MeOH etched sample. Moreover, ICP-Ar etching abandoned the drawbacks of Br–MeOH by producing corrosive gases, making it safer and more environmentally friendly. Therefore, inductively coupled Ar plasma etching is expected to replace Br–MeOH etching and become an effective method for CdZnTe surface treatment.

中文翻译：

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电感耦合Ar等离子体刻蚀对(111)面CdZnTe探测器性能的影响

摘要 研究了电感耦合 Ar 等离子体蚀刻 (ICP-Ar) 代替传统的 Br-MeOH 蚀刻对 CdZnTe 探测器性能的影响。通过实验确定最佳ICP蚀刻参数。XPS 结果表明，ICP-Ar 蚀刻的 CdZnTe 表面成分没有明显的 TeOx 峰，比 Br-MeOH 蚀刻的更接近化学计量比。与 Br-MeOH 蚀刻样品相比，ICP-Ar 蚀刻的 CdZnTe 表面的漏电流显着降低，能量分辨率的检测性能提高了 12%。此外，ICP-Ar 蚀刻通过产生腐蚀性气体克服了 Br-MeOH 的缺点，使其更安全、更环保。所以，