Abstract TiO2 film was deposited onto polyimide substrate by DC pulsed magnetron sputtering with different sputtering power densities. XRD results showed that with increasing the sputtering power density from 0.83 W/cm2 to 5.00 W/cm2, the crystallinity of as-deposited TiO2 film improved monotonously. And 5.00 W/cm2 was determined as the critical sputtering power density in which the highest temperature the substrate could withstand. Then, XRD and TEM results showed that the as-deposited TiO2 film could have a better anatase structure by providing an auxiliary heating to the substrate at the highest temperature during TiO2 film deposition. Combining the sputtering parameters, as well as DC pulsed voltage waveform, the reason for as-deposited TiO2 film crystallization was investigated systematically.

中文翻译：

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直流脉冲磁控溅射在聚酰亚胺基板上制备锐钛矿型TiO2薄膜的简单途径

摘要 采用不同溅射功率密度的直流脉冲磁控溅射技术在聚酰亚胺基板上沉积TiO2薄膜。XRD 结果表明，随着溅射功率密度从 0.83 W/cm2 增加到 5.00 W/cm2，沉积态 TiO2 薄膜的结晶度单调提高。5.00 W/cm2 被确定为临界溅射功率密度，其中衬底可以承受的最高温度。然后，XRD 和 TEM 结果表明，通过在 TiO2 薄膜沉积过程中在最高温度下为基板提供辅助加热，沉积态 TiO2 薄膜可以具有更好的锐钛矿结构。结合溅射参数以及直流脉冲电压波形，系统地研究了沉积态 TiO2 薄膜结晶的原因。