In this work, an alternative processing route for doping of hole-transporting layer (HTL) with improved hole extraction and passivation of anionic Pb-I antisite defects at the perovskite/HTL heterojunction is reported for the first time in perovskite solar cells (PSCs), referred as the infiltrated diffusion doping (INDD) method. In INDD processing, HTL is prepared by depositing the hole-transporting material and dopant sequentially in separate steps, involving deposition of the hole-transporting material (PTAA) in the first step, followed by the deposition of novel fluorine-containing hydrophobic Lewis acid dopant (LAD) in the second step, employing an orthogonal solvent with respect to the PTAA. To the best of our knowledge, it is a pioneer approach which replaces traditional blend casting doping technique for HTL. Consequently, the optimized PSC based on LAD doped PTAA by INDD processing shows a champion power conversion efficiency (PCE) of 20.32%, marking a record PCE in PSCs with a single dopant for PTAA reported to date, and superior long-term stability, retaining 93% of their initial efficiency in ambient environment without any encapsulation up to 1500 hours.

在这项工作中，首次报道了钙钛矿/ HTL异质结处掺杂空穴传输层（HTL）的另一种处理工艺，该方法具有改善的空穴提取和钝化阴离子Pb-1反位缺陷的钙钛矿/ HTL异质结。 ，称为渗透扩散掺杂（INDD）方法。在INDD处理中，通过在单独的步骤中依次沉积空穴传输材料和掺杂剂来制备HTL，包括在第一步中沉积空穴传输材料（PTAA），然后沉积新型的含氟疏水性路易斯酸掺杂剂（LAD）在第二步中，相对于PTAA采用正交溶剂。据我们所知，这是一种开创性的方法，它代替了传统的HTL混合浇铸掺杂技术。所以，